IRGIB10B60KD1

被绝缘的门双极晶体管与
ULTRAFAST 软的补救二极管

特点
? 低VCE () 非猛击通过IGBT 技术。
? 低二极管VF 。
? 10|2is 短路能力
? 正方形RBSOA 。
? Ultrasoft 二极管相反补救特征。
? 正面VCE () 温度系数。
? 最大连接点温度对了估计在175!a
好处
? 基准效率为马达控制。
? 坚固性瞬变表现。
? 低EMI 。
? 优秀当前分享在平行的操作。

 PD-94576A
IRGIB10B60KD1
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
V  = 600V
CES
Features
? Low VCE (on) Non Punch Through IGBT Technology.
I  = 10A, T =100!a
C C
? Low Diode VF.
? 10|ìs Short Circuit Capability
G
? Square RBSOA.
t  > 10|ìs,  =150!a
sc J
? Ultrasoft Diode Reverse Recovery Characteristics.
? Positive VCE (on) Temperature Coefficient.
E
? Maximum Junction Temperature Rated at 175!a
 typ. = 1.7V
V
CE(on)
n-channel
Benefits
? Benchmark Efficiency for Motor Control.
? Rugged Transient Performance.
? Low EMI.
? Excellent Current Sharing in Parallel Operation.
TO-220
Full-Pak
Absolute Maximum Ratings
ParameterMax.Units
V Collector-to-Emitter Voltage600V
CES
I
 @ T  = 25!aCContinuous Collector Current1
C C
I
 @ T  = 100!aCContinuous Collector Current10
C C
I
Pulse Collector Current (Ref.Fig.C.T.5)32
CM
Clamped Inductive Load current
I
32
LM
I
 @ T  = 25!aCDiode Continuous Forward Current1
F C
I
 @ T  = 100!aCDiode Continuous Forward Current1
F C
I
Diode Maximum Forward Current32
FM
V
RMS Isolation Voltage, Terminal to Case, t = 1 min2500V
ISOL
V
Gate-to-Emitter Voltage !à2
GE
P
 @ T  = 25!aCMaximum Power Dissipation44
D C
P
 @ T  = 100!aCMaximum Power Dissipation2
D C
T
Operating Junction and-55 to +175
J
T
Storage Temperature Range!a
STG
Soldering Temperature for 10 sec.300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw10 lbf.in (1.1N.m)
Thermal / Mechanical Characteristics
ParameterMin.Typ.Max. Units
R Junction-to-Case- IGBT¨C¨C¨C¨C¨JC 
Junction-to-Case- Diode¨C¨C¨C¨C¨C¨C5.
RJC
Case-to-Sink, flat, greased surface¨C¨C¨C0.50
RCS 
Junction-to-Ambient, typical socket mount ¨C¨C¨C¨C
RJA 
WtWeight ¨C¨C¨C2.0¨